@inproceedings{,
    author = {Al-Eryani, Jidan; Knapp, Herbert; Li, Hao; Aufinger, Klaus; Wursthorn, Jonas; Majied, Soran; Maurer, Linus},
    title = {A 47–217 GHz dynamic frequency divider in SiGe technology},
    editor = {},
    booktitle = {IEEE Bipolar/BiCMOS Circuits and Technology Meeting (2015, Boston, MA)},
    series = {},
    journal = {},
    address = {Piscataway, NJ},
    publisher = {IEEE},
    edition = {},
    year = {2015},
    isbn = {978-1-4673-8551-0 ; 978-1-4673-8550-3},
    volume = {},
    number =  {},
    pages = {},
    url = {},
    doi = {10.1109/BCTM.2015.7340570},
    keywords = {},
    abstract = {A divide-by-2 dynamic frequency divider with a frequency operating range from 47 up to 217GHz, i.e. a bandwidth of 170GHz, in a 130nm SiGe BiCMOS process with cut-off frequency fT =3D250 GHz is presented. To the best of authors' knowledge, this is the highest operating frequency and bandwidth reported so far in silicon. The divider is based on the regenerative frequency division principle followed by a buffer that can deliver ~-12.5dBm output power (no probe or waveguide/cable loss correction) at 217 GHz input frequency, which is sufficient to drive succeeding stages. The divider's correct functionality over its entire operating frequency range is verified with lab measurements.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik, EIT 4 - Institut für Mikroelektronik und Schaltungstechnik, Professur: Maurer, Linus},
    
    
}