@article{,
    author = {Hempel, A.; Dabrowski, A.; Härting, M.; Hempel, M.; Knoesen, D.; Bauer-Kugelmann, Werner; Kögel, Gottfried; Triftshäuser, Werner; Britton, David T.},
    title = {Annealing effects in hydrogenated amorphous silicon layers},
    editor = {},
    booktitle = {},
    series = {},
    journal = {Materials Science Forum},
    address = {},
    publisher = {},
    edition = {},
    year = {2001},
    isbn = {},
    volume = {},
    number =  {363-365},
    pages = {463-465},
    url = {https://www.scientific.net/MSF.363-365.463},
    doi = {10.4028/www.scientific.net/MSF.363-365.463},
    keywords = {},
    abstract = {The annealing behaviour of defect structures in hydrogenated amorphous silicon, produced by hot wire chemical vapour deposition (HWCVD) has been studied by pulsed and conventional positron beam techniques and X-ray diffraction. Positron lifetime measurements show a dominant component corresponding to small vacancy clusters. Doppler Broadening measurements indicate that the size and concentration of defects varies with annealing temperatures up to 400°C. This behaviour is accompanied by a change from the amorphous to a partly crystalline structure, which can be observed by X-ray diffraction studies.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Luft- und Raumfahrttechnik, LRT 2 - Institut für angewandte Physik und Messtechnik, Professur: Dollinger, Günther},
    
    
}