@article{,
    author = {Kimura, Kenji; Nakajima, Kaoru; Conard, Thierry; Vandervorst, Wilfried; Bergmaier, Andreas; Dollinger, Günther},
    title = {Analysis of ultra-Thin HfO2/SiON/Si(001) : Comparison of three different techniques},
    editor = {},
    booktitle = {},
    series = {},
    journal = {Analytical Sciences},
    address = {},
    publisher = {},
    edition = {},
    year = {2010},
    isbn = {},
    volume = {26},
    number =  {2},
    pages = {223-226},
    url = {https://www.jstage.jst.go.jp/article/analsci/26/2/26_2_223/_article},
    doi = {10.2116/analsci.26.223},
    keywords = {},
    abstract = {Composition depth profiling of HfO2 (2.5 nm)/SiON (1.6 nm)/Si(001) was performed by three diffetent analytical techniques: high-resolution Rutherford backscattering spectroscopy (HRBS), angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and high-resolution elastic recoil detection (HR-ERD). By comparing these results we found the following: (1) HRBS generally provides accurate depth profiles. However, care must be taken in backgroud subtraction for depth profiling of light elements. (2) In the standard AR-XPS analysis, a simple exponential formula is often used to calculate the photoelectron escape probability. This simple formula, however, cannot be used for the precise depth profiling. (2) Although HR-ERD is the most reliable technique for the depth profiling of light elements, it may suffer from multiple scattering, which deteriorates the depth resolution, and also may cause a large background.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Luft- und Raumfahrttechnik, LRT 2 - Institut für angewandte Physik und Messtechnik, Professur: Dollinger, Günther},
    
    
}