@article{,
    author = {Laumer, B.; Schuster, F.; Stutzmann, Martin; Bergmaier, Andreas; Dollinger, Günther; Eickhoff, M.},
    title = {Accurate determination of optical bandgap and lattice parameters of Zn 1-xMgxO epitaxial films (0 ≤ x ≤ 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire},
    editor = {},
    booktitle = {},
    series = {},
    journal = {Journal of Applied Physics},
    address = {},
    publisher = {},
    edition = {},
    year = {2013},
    isbn = {},
    volume = {113},
    number =  {23},
    pages = {},
    url = {http://scitation.aip.org/content/aip/journal/jap/113/23/10.1063/1.4811693},
    doi = {10.1063/1.4811693},
    keywords = {Absorption measurements; Elastic recoil detection analysis; Electron-hole interactions; Linear relationships; Mg concentrations; Photoluminescence emission; Plasma-assisted molecular beam epitaxy; Precise determinations, Energy gap; Epitaxial films; Lattice constants; Molecular beam epitaxy; Sapphire; Zinc, Epitaxial growth},
    abstract = {Zn1-xMgxO epitaxial films with Mg concentrations 0 ≤ x ≤ 0.3 were grown by plasma-assisted molecular beam epitaxy on a-plane sapphire substrates. Precise determination of the Mg concentration x was performed by elastic recoil detection analysis. The bandgap energy was extracted from absorption measurements with high accuracy taking electron-hole interaction and exciton-phonon complexes into account. From these results a linear relationship between bandgap energy and Mg concentration is established for x ≤ 0.3. Due to alloy disorder, the increase of the photoluminescence emission energy with Mg concentration is less pronounced. An analysis of the lattice parameters reveals that the epitaxial films grow biaxially strained on a-plane sapphire.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Luft- und Raumfahrttechnik, LRT 2 - Institut für angewandte Physik und Messtechnik, Professur: Dollinger, Günther},
    
    
}