@article{,
    author = {Polisski, G.; Dollinger, Günther; Bergmaier, Andreas; Kovalev, D.; Heckler, H.; Koch, Frederick},
    title = {Acceptor depletion in p-type porous silicon},
    editor = {},
    booktitle = {},
    series = {},
    journal = {Physica Status Solidi (A) Applications and Materials Science},
    address = {},
    publisher = {},
    edition = {},
    year = {1998},
    isbn = {},
    volume = {168},
    number =  {1},
    pages = {R1-R2},
    url = {http://onlinelibrary.wiley.com/doi/10.1002/(SICI)1521-396X(199807)168:1},
    doi = {10.1002/(SICI)1521-396X(199807)168:1<R1::AID-PSSA99991>3.0.CO;2-4},
    keywords = {Atoms ; Boron ; Carbon ; Crystals ; Doping (additives) ; Etching ; Fluorine ; Hydrogen ; Oxygen ; Passivation ; Porosity ; Surfaces, Acceptor depletion ; Anodic etching ; Elastic recoil detection ; Volume to surface ratio, Porous silicon},
    abstract = {},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Luft- und Raumfahrttechnik, LRT 2 - Institut für angewandte Physik und Messtechnik, Professur: Dollinger, Günther},
    
    
}