@article{,
    author = {Störmer, J.; Willutzki, Paul; Britton, David T.; Kögel, Gottfried; Triftshäuser, Werner; Kiunke, W.; Wittmann, F.; Eisele, Ignaz},
    title = {A slow positron lifetime study of the annealing behaviour of an amorphous silicon layer grown by MBE},
    editor = {},
    booktitle = {},
    series = {},
    journal = {Applied Physics A},
    address = {},
    publisher = {},
    edition = {},
    year = {1995},
    isbn = {},
    volume = {61},
    number =  {1},
    pages = {71-74},
    url = {http://link.springer.com/article/10.1007},
    doi = {10.1007/BF01538214},
    keywords = {},
    abstract = {We have studied MBE grown amorphous silicon, which was recrystallized at different temperatures for one hour, with a pulsed positron beam. A positron lifetime of 538±10 ps in the as-grown state is attributed to microvoids containing at least 10 vacancies. An incompletely recrystallized sample annealed at 500°C shows an additional long lifetime from ortho-positronium (o-Ps) pick-off annihilation. The o-Ps component disappears for samples, recrystallized at 700°C and above, and the defect lifetime steadily decreases with higher annealing temperature until a value of 310 ps is reached for the layer annealed at 1200°C. This value is explained by positron trapping at dislocations or small vacancy defects stabilized by dislocations or impurities. © 1995 Springer-Verlag.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Luft- und Raumfahrttechnik, LRT 2 - Institut für angewandte Physik und Messtechnik, Professur: Dollinger, Günther},
    
    
}