@inproceedings{,
    author = {Al-Eryani, Jidan; Knapp, Herbert; Wursthorn, Jonas; Aufinger, Klaus; Majied, Soran; Li, Hao; Boguth, Sabine; Lachner, Rudolf; Böck, Josef; Maurer, Linus},
    title = {A 162 GHz power amplifier with 14 dBm output power},
    editor = {},
    booktitle = {2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) },
    series = {},
    journal = {},
    address = {},
    publisher = {IEEE},
    edition = {},
    year = {2016},
    isbn = {978-1-5090-0484-3 ; 978-1-5090-0483-6},
    volume = {},
    number =  {},
    pages = {174-177},
    url = {},
    doi = {10.1109/BCTM.2016.7738965 },
    keywords = {},
    abstract = {A 3-stage power amplifier (PA) with 14dBm saturated output power (Psat), 29.5 dB small-signal gain, and 4.8% power-added efficiency (PAE) at a frequency of 162GHz is presented. From 155 to 165 GHz, Psat remains higher than 12.5 dBm, while the small-signal gain varies from 35.4 dB to 28.3 dB. Maximum output power and gain performance are obtained by using a differential cascode topology and operating the transistors well beyond their open-base collector-emitter breakdown voltage (BVCEO), and by optimum matching of the three stages of the PA. To our best knowledge, this is the highest reported output power for a sillicon-based PA beyond 150 GHz. The chip is fabricated in a 130nm SiGe BiCMOS technology with fT/fmax = 250/370 GHz.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik, EIT 4 - Institut für Mikroelektronik und Schaltungstechnik, Professur: Maurer, Linus},
    
    
}