@article{,
    author = {Yim, Chanyoung; McEvoy, Niall; Riazimehr, Sarah; Schneider, Daniel; Gity, Farzan; Monaghan, Scott; Hurley, Paul; Lemme, Max; Duesberg, Georg},
    title = {Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes},
    editor = {},
    booktitle = {},
    series = {},
    journal = {Nano Letters},
    address = {},
    publisher = {},
    edition = {},
    year = {2018},
    isbn = {},
    volume = {18},
    number =  {3},
    pages = {1794-1800},
    url = {},
    doi = {10.1021/acs.nanolett.7b05000},
    keywords = {},
    abstract = {Platinum diselenide (PtSe2) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-semiconductor transition when going from bulk to monolayer form. We report on vertical hybrid Schottky barrier diodes (SBDs) of two-dimensional (2D) PtSe2 thin films on crystalline n-type silicon. The diodes have been fabricated by transferring large-scale layered PtSe2 films, synthesized by thermally assisted conversion of predeposited Pt films at back-end-of-the-line CMOS compatible temperatures, onto SiO2/Si substrates. The diodes exhibit obvious rectifying behavior with a photoresponse under a 3 Spectral response analysis reveals a maximum responsivity of 490 mA/W at photon energies above the Si bandgap and relatively weak responsivity, in the range of 0.1-1.5 mA/W, at photon energies below the Si bandgap. In particular, the photoresponsivity of PtSe2 in infrared allows PtSe2 to be utilized as an absorber of infrared  light with tunable sensitivity. The results of our study indicate that PtSe2 is a promising option for the development of infrared  absorbers and detectors for optoelectronics applications with low-temperature processing conditions.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik, EIT 2 - Institut für Physik, Professur: Düsberg, Georg},
    
    
}