@article{,
    author = {McManus, John; Hennessy, Alison; Cullen, Conor; Hallam, Toby; McEvoy, Niall; Duesberg, Georg},
    title = {Controlling Defect and Dopant Concentrations in Graphene by Remote Plasma Treatments},
    editor = {},
    booktitle = {},
    series = {},
    journal = {Physica Status Solidi (B) Basic Solid State Physics},
    address = {},
    publisher = {},
    edition = {},
    year = {2017},
    isbn = {},
    volume = {254},
    number =  {11},
    pages = {},
    url = {https://doi.org/10.1002/pssb.201700214},
    doi = {10.1002/pssb.201700214},
    keywords = {chemical vapour deposition ; doping ; graphene ; nitrogen ; plasma treatment ; transistors},
    abstract = {This report details the controllable doping of graphene through post-growth plasma treatments. Defects are controllably introduced into the lattice using argon plasma, following this sample are exposed to ammonia/hydrogen plasma. During this nitrogen atoms get incorporated causing partial restoration of the graphene lattice. The damage levels are characterised by Raman and X-ray photoelectron spectroscopies. The incorporation of nitrogen into the graphene lattice provides significant n-doping. This is confirmed by the fabrication of graphene field-effect transistors which show clear n-type behaviour and mobilities not significantly less than those of pristine graphene. Thus this work demonstrates the viability of plasma treatments to reliably dope graphene.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik, EIT 2 - Institut für Physik, Professur: Düsberg, Georg},
    
    
}