@article{,
    author = {Hirler, Alexander; Biba, Josef; Alsioufy, Adnan; Lehndorff; Thomas; Sulima, Torsten; Lochner, Helmut; Abelein, Ulrich; Hansch, Walter},
    title = {Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliability},
    editor = {Labat, Nathalie; Marc, François; Fremont, Hélène; Bafleur, Marise},
    booktitle = {},
    series = {},
    journal = {Microelectronics  Reliability},
    address = {},
    publisher = {Elsevier Ltd.},
    edition = {},
    year = {2017},
    isbn = {},
    volume = {},
    number =  {76-77},
    pages = {38-41},
    url = {https://doi.org/10.1016/j.microrel.2017.06.022},
    doi = {10.1016/j.microel.2017.06.022},
    keywords = {},
    abstract = {Lifetime and duty cycles of automotive electronics are increasing, inducing new challenges to reliability predictions and testing. For qualification purposes, the automotive industry generates various time-dependent mission profiles with various stressors and varying stress levels according to different use cases. 
We present a theoretical model, describing the common approach, to reduce the stressors from time-dependent mission profiles to the two single parameters "effective stress level" and "effective stress time" for equivalent reliability testing. In a first step, the cumulative exposure (CE) model is shown to describe the future reliability behaviour after steplike stress level changes. Taking into account the individual characteristic lifetimes T-63 of the corresponding Weibull distributions, in a second step, an effective T-63 lifetime can be derived. For this calculation, periodic stress cycles are defined and transformed into an equivalent effective stress level. This procedure confirms the industry-wide used approach of dealing with effective stress levels for reliability testing. 
For the experimental validation metal-oxide-semiconductor (MOS) capacitors are fabricated and stressed by voltage and temperature. The received reliability data fit the theoretical predictions within the statistical variations.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik, EIT 2 - Institut für Physik, Professur: Hansch, Walter},
    
    
}