@article{,
    author = {Alsioufy, Adnan; Hirler, Alexander; Lehndorff, Thomas; Sulima, Torsten; Lochner, Helmut; Simon, Stefan; Siddabathula, Mahesh; Wiatr, Maciej; Hansch, Walter},
    title = {Technology Black Box : A Pioneering Tool for Semiconductor Technology Development in the Automotive Industry},
    editor = {},
    booktitle = {},
    series = {},
    journal = {},
    address = {Neubiberg},
    publisher = {Universität der Bundeswehr München},
    edition = {},
    year = {2020},
    isbn = {},
    volume = {},
    number =  {},
    pages = {},
    url = {},
    doi = {10.18726/2020_1},
    keywords = {},
    abstract = {During last years the automotive industry is driving substantial changes in the semiconductor value chain, seeking for specialized products tightly bounded to their application space. Therefore even if the Automotive Electronics Council (AEC) states different "grades" for the compliance of microelectronics chips, under different uniform environmental temperature stress, still an agreement on actual Mission Profiles (MP) is missing. The MP remains nowadays customer specific, therefore the assessment of a semiconductor technology against such customized specifications has to be insured on a case-by-case standpoint. In this paper we present the Technology Black Box (TBB) as a new effective tool for the assessment of the microelectronics technology to the specific automotive requirements. Combinations of stresses derived from MPs and physical parameters are used in the TBB for realistic calculations and to identify the technology limitations. Such limitations can be afterwards fine-tuned, before technology qualification, so that TBB can be also used as an effective tool for technology development. The use cases of TBB, presented in this paper, come from the assessment of 28SLP (28nm Super Low Power) against different automotive grades, and the development of 22FDX (Fully-Depleted Silicon-On-Insulator (FD-SOI)) technology from GLOBALFOUNDRIES.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik, EIT 2 - Institut für Physik, Professur: Hansch, Walter},
    
    
}