@article{, author = {Uedono, Akira; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Egger, Werner; Koschine, Tönjes; Hugenschmidt, Christoph; Dickmann, Marcel; Shima, Kohei; Kojima, Kazunobu; Chichibu, Shigefusa F.; Ishibashi, Shoji}, title = {Annealing Behavior of Vacancy-Type Defects in Mg- and H-Implanted GaN Studied Using Monoenergetic Positron Beams}, editor = {}, booktitle = {}, series = {}, journal = {Physica Status Solidi (B) Basic Solid State Physics}, address = {}, publisher = {}, edition = {}, year = {2019}, isbn = {}, volume = {256}, number = {10}, pages = {1900104}, url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.201900104}, doi = {10.1002/pssb.201900104}, keywords = {GaN ; ion implantation ; Mg ; defects ; vacancies ; positron annihilation}, abstract = {Vacancy-type defects in Mg-implanted GaN with and without hydrogen (H) implantation are probed by using monoenergetic positron beams. Mg+ and H+ ions are implanted into GaN(0001¯) to obtain 0.1 and 0.7-µm-deep box profiles with Mg and H concentrations of 1 × 1019 and 2 × 1020 cm−3, respectively. For the as-implanted samples, the major defect species is determined to be Ga-vacancy (VGa) related defects such as VGa, divacancy (VGaVN), and their complexes with impurities. For Mg-implanted samples, an agglomeration of vacancies starts at 800 °C annealing, leading to the formation of vacancy clusters such as (VGaVN)3. For the samples annealed above 1000 °C, the trapping rate of positrons by vacancies is increased by illumination of a He–Cd laser. This is attributed to the capture of photon-excited electrons by the defects and their charge transition. For Mg- and H-implanted samples, the hydrogenation of vacancy-type defects starts after 800 °C annealing. Comparing with the annealing behavior of defects for the samples without H-implantation, the clustering of vacancy-type defects is suppressed, which can be attributed to the interaction between Mg, H, and vacancies.}, note = {}, institution = {Universität der Bundeswehr München, Fakultät für Luft- und Raumfahrttechnik, LRT 2 - Institut für Angewandte Physik und Messtechnik, Professur: Dollinger, Günther}, }