@article{,
    author = {Rao, Vaishnavi; Matthiesen, Maik; Goetz, Katelyn; Huck, Christian; Yim, Chanyoung; Siris, Rita; Han, Jie; Hahn, Sebastian; Bunz, Uwe; Dreuw, Andreas; Duesberg, Georg; Pucci, Annemarie; Zaumseil, Jana},
    title = {AFM-IR and IR-SNOM for the Characterization of Small Molecule Organic Semiconductors},
    editor = {},
    booktitle = {},
    series = {},
    journal = {The Journal of Physical Chemistry C},
    address = {},
    publisher = {},
    edition = {},
    year = {2020},
    isbn = {},
    volume = {124},
    number =  {9},
    pages = {5331-5344},
    url = {https://doi.org/10.1021/acs.jpcc.9b11056},
    doi = {},
    keywords = {},
    abstract = {Vibrational spectroscopies, such as Raman and Fourier-transform infrared spectroscopy (FT-IR), are powerful tools for the characterization of organic semiconductor thin films and crystals in addition to X-ray diffraction and scanning atomic force microscopy. They enable the investigation of molecular orientation, polymorphism, doping levels, and intra- as well as intermolecular vibrational modes albeit without much spatial resolution. Two fundamentally different scanning probe techniques offer two-dimensional mapping of infrared-active modes with a spatial resolution below 100 nm: scattering-type scanning near-field optical microscopy (IR s-SNOM) and atomic force microscopy-infrared spectroscopy (AFM-IR). Here, we compare these two techniques with each other and to conventional FT-IR spectroscopy measurements with regard to their applicability to highly ordered molecular semiconductors. For this purpose …},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik, EIT 2 - Institut für Physik, Professur: Düsberg, Georg},
    
    
}