@article{,
    author = {Uedono, Akira; Shojiki, Kanako; Uesugi, Kenjiro; Chichibu, Shigefusa F.; Ishibashi, Shoji; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Miyake, Hideto},
    title = {Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams},
    editor = {},
    booktitle = {},
    series = {},
    journal = {Journal of Applied Physics},
    address = {},
    publisher = {},
    edition = {},
    year = {2020},
    isbn = {},
    volume = {128},
    number =  {8},
    pages = {085704},
    url = {https://doi.org/10.1063/5.0015225},
    doi = {10.1063/5.0015225},
    keywords = {},
    abstract = {},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Luft- und Raumfahrttechnik, LRT 2 - Institut für Angewandte Physik und Messtechnik, Professur: Dollinger, Günther},
    
    
}