@inproceedings{,
    author = {Lin, Jun; Monaghan, Scott; Sakhuja, Neha; Gity, Farzan; Kumar Jha, Ravindra; Coleman, Emma; Connolly, James; Cullen, Conor; Walsh, Lee; Mannarino, Teresa; Schmidt, Michael; Sheehan, Brendan; Düsberg, Georg; Mc Evoy, Niall; Bhat, Navakanta; Hurley, Paul; Povey, Ian; Bhattacharjee, Shubhadeep},
    title = {Chemical Vapor Deposition of MoS<sub>2</sub> for Back-End-of-Line Applications},
    editor = {},
    booktitle = {240th ECS Meeting October 10, 2021 - October 14, 2021},
    series = {ECS Meeting Abstracts},
    journal = {},
    address = {},
    publisher = {IOP Publishing},
    edition = {},
    year = {2021},
    isbn = {},
    volume = {MA2021-02},
    number =  {},
    pages = {1952},
    url = {https://doi.org/10.1149/MA2021-02311952mtgabs},
    doi = {10.1149/MA2021-02311952mtgabs},
    keywords = {},
    abstract = {2D transition metal dichalcogenides (TMDs) exhibit electronic properties from semimetals to wide bandgap semiconductors due to their thickness dependent bandgap. This property opens a wide diversity of applications that can be made from TMDs. For 3D heterogeneous integration of TMDs into the back-end-of-line (BEOL) of Si complementary metal-oxide-semiconductor circuitry, wafer-level direct growth (without film transfer) of TMDs within the BEOL thermal budget limit (550 °C/2 hours or 500 °C/5 hours [1]) is essential. In the literature, the majority of the TMDs (e.g. MoS<sub>2</sub>) are achieved from high temperature (650 °C - 1100 °C) deposition/anneal processes that are not compatible with BEOL [2]. In this work, MoS<sub>2</sub> is successfully grown by chemical vapor deposition (CVD) approximately at/below BEOL thermal budget limit. We explore the potential of the achieved MoS<sub>2</sub> films for BEOL logic (i.e …},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik, EIT 2 - Institut für Physik, Professur: Düsberg, Georg},
    
    
}