@article{,
    author = {Heiserer, Stefan; Eder, Peter; Ó Coileáin, Cormac; Biba, Josef; Stimpel-Lindner, Tanja; Bartlam, Cian; Rührmair, Ulrich; Duesberg, Georg S.},
    title = {Controllable and Reproducible Growth of Transition Metal Dichalcogenides by Design of Experiments},
    editor = {},
    booktitle = {},
    series = {},
    journal = {Advanced Electronic Materials},
    address = {},
    publisher = {},
    edition = {},
    year = {2023},
    isbn = {},
    volume = {9},
    number =  {10},
    pages = {2300281},
    url = {https://doi.org/10.1002/aelm.202300281},
    doi = {10.1002/aelm.202300281},
    keywords = {2D materials ; chemical vapor deposition ; design of experiments ; growth optimization ; synthesis ; transition metal dichalcogenides ; tungsten disulfide},
    abstract = {Controllable and reproducible synthesis of 2D materials is crucial for their
future applications. Chemical vapor deposition (CVD) promises scalable and
high-quality growth of 2D materials. However, to optimize CVD growth,
multiple parameters have to be carefully selected. Design of experiments
(DoE) is a consistent and versatile tool to optimize all parameters
simultaneously in a controlled way. This study exploits DoE statistical
approaches to show how the CVD growth of transition metal dichalcogenides
(TMDs) can be optimized, using tungsten disulfide as an example. A designed
set of 29 different processes is used to cover the entire parameter space. The
resulting growth output is characterized in terms of material morphology for
factors such as single crystal size and continuous film size. The nonlinear
model used to fit the output as a function of input parameters provides crucial
insights into the nontrivial CVD process ensuring easy and systematic growth
optimization. The predicted processes show successful optimization with
respect to both the resulting material and the process stability. This powerful
technique can be adapted for different setups and other TMD materials.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik, EIT 2 - Institut für Physik, Professur: Düsberg, Georg},
    
    
}