@manual{
	titlea = "Prof.",
	vornamea = "Georg ",
	namea = "Düsberg",
	departmenta = "Fakultät für Elektrotechnik und Informationstechnik",
	institutea = "EIT 2 - Institut für Physik",
	titleb = "",
	vornameb = "",
	nameb = "",
	departmentb = "",
	instituteb = "",
	titlec = "",
	vornamec = "",
	namec = "",
	departmentc = "",
	institutec = "",
	external-funds = "European Commission",
	company = "",
	project-title = "2D Printable ",
	project-abstract = "The aim of 2D-PRINTABLE is to use sustainable liquid exfoliation methods to make over 40 new 2D-materials (2DMs) and to develop printing and liquid-deposition methods to fabricate nanosheet networks and heterostructures with unique properties. This will enable the production of advanced printed digital devices, in perfect alignment with the expected outcomes of the work program. To identify new 2DMs, we will use modelling to survey thousands of possible 2DMs, including conductors, semiconductors and insulators, identifying those with superlative electronic properties. Layered crystals of these target materials will be synthesised and then converted to 2D nanosheets using various liquid exfoliation techniques. Chemical functionalisation will be used to modify and tune nanosheet properties and eventually to achieve in-situ chemical cross linking of nanosheets. We will develop a range of printing and deposition methods to produce nanosheet networks, employing both physical and chemical routes to achieve strong coupling between adjacent nanosheets, leading to extremely low junction resistance and hence exceptional network mobility. These approaches will be extended to allow us to print/deposit networks of different nanosheets on top of each other leading to heterostructures with strongly-coupled interfaces, allowing fast and efficient charge injection or transfer. These heterostructures will be the basis for a range of printed electronic devices such as transistors, solar cells or LEDs. In all cases we expect very high performance because of the superlative nanosheet properties, the quality of interfaces and the facile nature of inter-nanosheet charge transfer. For example, we expect to produce printed transistors with gate capacitance >0.4 mF/cm2, transconductance >0.1 mS/sq, on/off ratio >1000000, mobility ~100 cm2/Vs with the latter value x10-100 times greater than the state-of-the-art.",
	proj-beginn = "01.10.2023",
	proj-end = "30.09.2026",
	forschungszentrum = "FZ SENS"
}