@misc{,
    author = {Braun, Dennis; Ganeriwala, Mohit D.; Völkel, Lukas; Ran, Ke; Lukas, Sebastian; Marín, Enrique G.; Hartwig, Oliver; Prechtl, Maximilian; Wahlbrink, Thorsten; Mayer, Joachim; Düsberg, Georg; Godoy, Andrés; Daus, Alvin; Lemme, Max C.},
    title = {Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors},
    editor = {},
    booktitle = {},
    series = {},
    journal = {},
    address = {},
    publisher = {},
    edition = {},
    year = {2023},
    isbn = {},
    volume = {},
    number =  {},
    pages = {1-30},
    url = {},
    doi = {10.48550/arXiv.2309.13900},
    keywords = {},
    abstract = {Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices,
including memristors. Resistive switching (RS) in such 2D material memristors has been
attributed to the formation and dissolution of conductive filaments created by the diffusion of
metal ions between the electrodes. However, the area-scalable fabrication of patterned devices
involves polymers that are difficult to remove from the 2D material interfaces without damage.
Remaining polymer residues are often overlooked when interpreting the RS characteristics of 2D
material memristors. Here, we demonstrate that the parasitic residues themselves can be the
2
origin of RS. We emphasize the necessity to fabricate appropriate reference structures and
employ atomic-scale material characterization techniques to properly evaluate the potential of
2D materials as the switching layer in vertical memristors. Our polymer-residue-based
memristors exhibit RS typical for a filamentary mechanism with metal ion migration, and their
performance parameters are strikingly similar to commonly reported 2D material memristors.
This reveals that the exclusive consideration of electrical data without a thorough verification of
material interfaces can easily lead to misinterpretations about the potential of 2D materials for
memristor applications.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik, EIT 2 - Institut für Physik, Professur: Düsberg, Georg},
    
    
}