@article{,
    author = {Preitnacher, Jonathan; Ageev, Sergei; Hansch, Walter},
    title = {Enhancing photodetection efficiency of CMOS SiPMs using virtual guard rings in a standard 0.35 μm process},
    editor = {},
    booktitle = {},
    series = {},
    journal = {Electronics Letters},
    address = {},
    publisher = {},
    edition = {},
    year = {2023},
    isbn = {},
    volume = {59},
    number =  {19},
    pages = {e12938},
    url = {https://doi.org/10.1049/ell2.12938},
    doi = {10.1049/ell2.12938},
    keywords = {},
    abstract = {In this letter, a design of virtual guarded SiPMs fabricated in a standard
0.35μm standard complementary metal oxide semiconductor (CMOS)
process is introduced. The performance of these virtual guarded cells
(VGC) is compared to that of conventional cells with real guard rings,
referred to as physical guarded cells (PGC). Specifically, the photon detection
efficiency (PDE) of both types of SiPMs is evaluated. For this,
PDE calculations are conducted at different overvoltages (OVs) and the
PDE is compared depending on the wavelength before conducting measurements.
The results demonstrate that the VGC SiPM outperforms
the PGC SiPM, exhibiting a true PDE of (22.5 ± 0.5)%, which is significantly
higher than the PDE of (10.9 ± 0.3)% obtained for the PGC
SiPM. The superior PDE of the VGC SiPM is attributed to a larger active
or photosensitive area due to the virtual guard rings and a thinner
n-layer in the photosensitive region.},
    note = {},
    institution = {Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik, EIT 2 - Institut für Physik, Professur: Hansch, Walter},
    
    
}