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Autoren:
McManus, John; Hennessy, Alison; Cullen, Conor; Hallam, Toby; McEvoy, Niall; Duesberg, Georg 
Dokumenttyp:
Zeitschriftenartikel / Journal Article 
Titel:
Controlling Defect and Dopant Concentrations in Graphene by Remote Plasma Treatments 
Zeitschrift:
Physica Status Solidi (B) Basic Solid State Physics 
Jahrgang:
254 
Heftnummer:
11 
Jahr:
2017 
Sprache:
Englisch 
Stichwörter:
chemical vapour deposition ; doping ; graphene ; nitrogen ; plasma treatment ; transistors 
Abstract:
This report details the controllable doping of graphene through post-growth plasma treatments. Defects are controllably introduced into the lattice using argon plasma, following this sample are exposed to ammonia/hydrogen plasma. During this nitrogen atoms get incorporated causing partial restoration of the graphene lattice. The damage levels are characterised by Raman and X-ray photoelectron spectroscopies. The incorporation of nitrogen into the graphene lattice provides significant n-doping. T...    »
 
ISSN:
0370-1972 
Article-ID:
1700214 
Fakultät:
Fakultät für Elektrotechnik und Informationstechnik 
Institut:
EIT 2 - Institut für Physik 
Professur:
Düsberg, Georg 
Open Access ja oder nein?:
Nein / No