The annealing behaviour of defect structures in hydrogenated amorphous silicon, produced by hot wire chemical vapour deposition (HWCVD) has been studied by pulsed and conventional positron beam techniques and X-ray diffraction. Positron lifetime measurements show a dominant component corresponding to small vacancy clusters. Doppler Broadening measurements indicate that the size and concentration of defects varies with annealing temperatures up to 400°C. This behaviour is accompanied by a change from the amorphous to a partly crystalline structure, which can be observed by X-ray diffraction studies.    «

The annealing behaviour of defect structures in hydrogenated amorphous silicon, produced by hot wire chemical vapour deposition (HWCVD) has been studied by pulsed and conventional positron beam techniques and X-ray diffraction. Positron lifetime measurements show a dominant component corresponding to small vacancy clusters. Doppler Broadening measurements indicate that the size and concentration of defects varies with annealing temperatures up to 400°C. This behaviour is accompanied by a change...    »